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Trap level spectroscopy in amorphous selenium-based semiconductors

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Abstract

Informative and relatively simple spectroscopic technique, namely thermally stimulated depolarization currents, is considered for studying of defect states in the mobility gap of amorphous Se-based semiconductors.

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Authors and Affiliations

  1. Institute for Solid State Physics and Chemistry, Uzhgorod National University, Voloshina 54, 88000, Uzhgorod, Ukraine

    V. I. Mikla

  2. Yazaki Ukraine Ltd, Uzhgorod, Ukraine

    V. V. Mikla

Authors
  1. V. I. Mikla
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  2. V. V. Mikla
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Correspondence to V. I. Mikla.

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Mikla, V.I., Mikla, V.V. Trap level spectroscopy in amorphous selenium-based semiconductors. J Mater Sci: Mater Electron 20, 1059–1067 (2009). https://doi.org/10.1007/s10854-009-9951-y

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  • DOI: https://doi.org/10.1007/s10854-009-9951-y

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