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Characterization of PT ferroelectric thin films on porous silica for pyroelectric IR detectors

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Abstract

Ferroelectric PbTiO3 thin films were deposited on Pt/DS/PS/SiO2/Si substrates by sol–gel technique. Porous silica (PS) thin film was used as thermal-insulation layer and dense silica (DS) thin film was a buffer layer to reduce surface roughness of PS layer. Root mean square surface roughness can be effectively reduced from 9.7 to 3.5 nm after PS buffer layer was prepared. The average grain size of PT thin films decreased slightly with increasing thickness of porous silica. Dielectric constant of PT increased from 107 to 171 at 1 KHz as thickness of PS layer increased from 0 to 2,000 nm. PT thin film prepared on 2,000 nm porous silica exhibited good dielectric property. The leakage current density was less than 1.6 × 10-6 A/cm2 when the applied electrical field was 200 kV/cm. The composite film is suitable for preparing pyroelectric IR detectors.

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Acknowledgement

This work was supported by the Ministry of Sciences and Technology of China through 973-Project under grant 2002CB613304, Shanghai Nano Fundamental Committee under contract no. 0152NM038, and the University Key Studies Project of Shanghai.

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Authors and Affiliations

  1. Functional Materials Research Laboratory, Tongji University, Shanghai, 200092, China

    Yuli Li, ** Yao, Liangying Zhang & **g Wang

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  1. Yuli Li
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  2. ** Yao
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  3. Liangying Zhang
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Correspondence to Yuli Li.

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Li, Y., Yao, X., Zhang, L. et al. Characterization of PT ferroelectric thin films on porous silica for pyroelectric IR detectors. J Electroceram 21, 659–663 (2008). https://doi.org/10.1007/s10832-007-9274-4

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  • DOI: https://doi.org/10.1007/s10832-007-9274-4

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