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Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

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Abstract

In this paper, the single-event effects of Schottky contact super barrier rectifier (SSBR) and conventional super barrier rectifier (SBR) as comparison structure are simulated and discussed. The high-k dielectric has a larger dielectric constant and a larger physical thickness at the same equivalent oxide thickness (EOT). Therefore, it is used to enhance the single-event gate rupture (SEGR) performance of the devices. Simulation results show that the SEGR performance of SSBR and SBR is significantly improved after using high-k dielectric as the gate dielectric. Furthermore, due to the absence of a parasitic bipolar junction transistor (BJT), SSBR has a higher single-event burnout (SEB) performance than conventional SBR. In conclusion, SSBR has a good performance of single-event effect (SEGR and SEB) and is better than that of SBR after using high-k dielectric as the gate dielectric.

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Acknowledgements

This work was supported by Project of Chongqing Natural Science Foundation (No. cstc2020jcyj-msxmX0572), Science and Technology on Analog Integrated Circuit Laboratory Foundation Project, China (No. 6142802200510), and Project Supported by the Fundamental Research Funds for the Central Universities (No. 2020CDJ-LHZZ-076).

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  1. National Key Laboratory of Power Transmission Equipment Technology, School of Electrical Engineering, Chongqing University, Chongqing, 400044, China

    Aohang Zhang, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu, Yuying Wang & Jian Li

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Zhang, A., Chen, W., Huang, J. et al. Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric. J Comput Electron 22, 1463–1471 (2023). https://doi.org/10.1007/s10825-023-02088-8

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