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Modeling and design of a Mott selector for a ReRAM-based non-volatile memory cell in a crossbar architecture

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Abstract

In this work, we developed a model for a nonvolatile memory cell based on the electrical model for a TiOX/HfOx ReRAM cell and the hybrid electrothermal model of a VO2 Mott selector developed recently by our team. Both models have been calibrated and validated with experimental data, and the operating characteristics of a one-selector-one-ReRAM (1S1R) memory cell has been studied. The length of the selector layer was varied as a design parameter to meet the design requirements for proper read, write, and erase operations. Simulation results suggest that the modified selector cell with 60 nm length of the VO2 layer meets all the requirements for proper operation, with a cell write voltage of 1.6 V and erase voltage of 2.5 V. The access time for this structure was studied by benchmarking with experimental data. Write access time of 10.5 ns and erase access time of 16 ns have been obtained from simulations.

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Authors and Affiliations

  1. Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran

    Mohammadreza Farjadian & Majid Shalchian

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  1. Mohammadreza Farjadian
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  2. Majid Shalchian
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Correspondence to Majid Shalchian.

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Farjadian, M., Shalchian, M. Modeling and design of a Mott selector for a ReRAM-based non-volatile memory cell in a crossbar architecture. J Comput Electron 21, 535–549 (2022). https://doi.org/10.1007/s10825-022-01860-6

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  • DOI: https://doi.org/10.1007/s10825-022-01860-6

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