Abstract
This paper offers the first demonstration of the design and layout of a fully integrated power converter in a monolithic Silicon Carbide (SiC) technology. A 400 V Buck Converter integrated with Gate-Drivers and Low-Voltage Control circuitry in a 25–600 V Mixed-Mode SiC CMOS technology has been presented in this paper. A new SiC technology has been developed for this design which has a feature size of 1 μm. This technology allows integration of High-Voltage Power FETs and Low-Voltage CMOS circuits on the same die with a common substrate. Both high-side and low-side Power FETs are N-type hence a bootstrap circuit is used, and the gate drivers use an isolated capacitive level shifter to translate the signals from the 25 V domain to the 400 V domain which is the input voltage of the Buck Converter. The load current is 1 A and the nominal output voltage is 100 V thereby meaning that the output power is 100 W. The switching frequency is up to 1 MHz, and the duty cycle can range from 10% to 90% signifying a wide range of operation of the converter.
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Advanced Research Projects Agency - Energy, DE—AR0001028.
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Utsav Gupta and Ayman Fayed wrote the main manuscript. Hua Zhang reviewed the manuscript. All authors contributed with relevant text, figures and data to make this paper possible. All authors are involved in the same research project.
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Gupta, U., Zhang, H., Liu, T. et al. A 400 V Buck Converter integrated with Gate-Drivers and low-voltage Controller in a 25–600 V mixed-mode SiC CMOS technology. Analog Integr Circ Sig Process 119, 463–474 (2024). https://doi.org/10.1007/s10470-024-02270-3
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DOI: https://doi.org/10.1007/s10470-024-02270-3