Abstract
The optical properties of 30-layer [nc-Si:SiO2/SiO2]30 periodic films have been studied. The films were prepared by alternately evaporating SiO and SiO2 onto Si(100) substrates, followed by annealing at 1100 ∘C. Spectroscopic ellipsometry spectrum analysis was used to determine the optical constants of the samples via the Forouhi–Bloomer model. The optical bandgap of a single periodic film is calculated. The photoluminescence (PL) spectra of three samples with different thicknesses clearly show that there are two physical origins of the PL process.
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Acknowledgements
One of the authors (J. Li) acknowledges the financial support of the National Nature Science Foundation of China (Grant No. 60578047), the National Basic Research Program of China (Grant Nos. 2009CB929201, 2010CB933703, 2012CB934303), the Shanghai Commission of Science and Technology (Grant No. 06DJ14007), and the open fund from the Laser Research Institute of Qufu Normal University. The authors would like to thank Professor M. Lu at Fudan University for assistance with sample preparation, Professor T.X. Liu at Fudan University for assistance with the XRD test, and Professor S.M. Zhou at Tongji University for fruitful discussions.
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Feng, L., Zhu, J., Wei, S. et al. Optical properties investigation of [nc-Si:SiO2/SiO2]30 periodic multilayer films. Appl. Phys. A 109, 547–551 (2012). https://doi.org/10.1007/s00339-012-7068-2
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DOI: https://doi.org/10.1007/s00339-012-7068-2