Summary
We present the theory of hyper-Raman scattering of light (HRS) from lattice vibrations in an inhomogeneous surface region of a semiconductor. Inhomogeneities due to surface band bending associated with carrier depletion or accumulation layers are considered. Large inhomogeneities induce local changes of sign in the dielectric permittivity and consequent large enhancements of HRS intensity. The role of carrier scattering and spatial dispersion is discussed together with possible extensions of HRS spectroscopy to Schottky barriers and Ohmic contacts and the development of a novel scanning HRS spectroscopy.
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In honour of Prof. Gianfranco Chiarotti on the occasion of his 70th birthday.
This work is gratefully dedicated to Prof. GIANFRANCO CHIAROTTI who has pioneered the very important (and difficult) field of surface optical spectroscopy, paving the way to a major progress in the study of semiconductor surfaces and nanostructures, and has grown in Rome a generation of top-class experimentalists. We thank Prof. V. R. VELASCO (Universidad Autonoma, Madrid) for useful discussions. This research has been supported by INTAS Foundation, grant INTAS-93-3476, and by the Russian State Program “Surface Atomic Structures”, grant No 95–2.23. Authors IPI, AYuM and LVU acknowledge financial support by the Russian Foundation for Basic Research, Program “Leading Research Schools”, grant No 96.15–96.348. The application to carbon films (in progress) is studied in the framework of the INFM Advanced Research Project CLASS.
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Benedek, G., Ipatova, I.P., Maslov, A.Y. et al. Theory of enhanced hyper-Raman scattering from inhomogeneous semiconductor surfaces: Effects of carrier scattering and spatial dispersion. Nouv Cim D 20, 957–966 (1998). https://doi.org/10.1007/BF03185499
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DOI: https://doi.org/10.1007/BF03185499