Abstract
We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. TheI-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (0–5 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio ΔR/R 0 (ΔR =R H -R 0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and -60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.
Similar content being viewed by others
![](https://media.springernature.com/w215h120/springer-static/image/art%3A10.1007%2Fs10948-019-5023-6/MediaObjects/10948_2019_5023_Fig1_HTML.png)
References
Shimizu, T., Gotoh, N., Shinozaki, N. et al., The properties of Schottky junctions on Nb-doped SrTiO3(001), Appl. Surf. Sci., 1997, 117/118: 400–405.
Suzuki, S., Yamamoto, T., Suzuki, H. et al., Fabrication and characterization of Ba1-xKxBiO3/Nb-doped SrTiO3 all-oxide-type Schottky junctions, J. Appl. Phys., 1997, 81(10): 6830–6836.
Shimizu, T., Okushi, H., Intrinsic electrical properties of Au/SrTiO3 Schottky junctions, J. Appl. Phys., 1999, 85(10): 7244–7251.
Newns, D. M., Misewich, J. A., Tsuei, C. C. et al., Mott transition field effect transistor, Appl. Phys. Lett., 1998, 73(6): 780–782.
Misewich, J. A., Schrott, A. G., Room-temperature oxide field-effect transistor with buried channel, Appl. Phys. Lett., 2000, 76(24): 3632–3634.
Watanabe, Y., Tunneling current through a possible all-perovskite oxide p-n junction, Phys. Rev. B, 1998, 57(10): R5563-R5566.
Watanabe, Y., Electrical transport through Pb(Zr,Ti)O3 p-n and p-p heterostructures modolated by bound charges at a ferroelectric surface: ferroelectric p-n diode, Phys. Rev. B, 1999, 59(17): 11257–11266.
Kudo, A., Yanagi, H., Ueda, K. et al., Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semi-conductors, Appl. Phys. Lett. 1999, 75(18): 2851–2853.
Mitra, C., Raychaudhun, P., Kobernik, G. et al., p-n diode with hole- and electron-doped lanthanum manganites, Appl. Phys. Lett., 2001, 79(15): 2408–2410.
Tanaka, H., Zhang, J., Kawai, T., Giant electric field modulation of double exchange ferromagnetism at room temperature in the perovskite manganite/titanate p-n junction, Phys. Rev. Lett., 2002, 88(2): 027204-1–027204-4.
Tsang, C., Santim, H. McCown, D. et al., 3 Gb/in2 recoding demonstration with dua element heads & thin film disks, IEEE MAG, 1996, 32(1): 7–12.
Smith, N., Zeltser, A. M., GMR multilayers and head design for ultrahigh density magnetic recording, IEEE MAG, 1996, 32(1): 135–141.
Tang, D. D., Wang, P. K. Sepridsu, V. S. et al., Spin-valve RAM cell, IEEE MAG, 1995, 31(6): 3206–3208.
Pohm, A. V., Daughton, J. M. Brown, J. et al. The architecture of a high performance mass store with GMR memory cell, IEEE MAG, 1995, 31(6): 3200–3202.
Lu, H. B., Dai, S. Y., Chen, F. et al., Fabrication of BaTiO3 p-n junctions by laser molecular beam epitaxy, Ferroelectrics, 2002, 271: 125–130.
Yang, G. Z., Lu, H. B., Chen, F. et al., Laser molecular beam epitaxy and characterization of perovskite oxide thin films, J. Crystal Growth, 2001, 227–228: 929–935.
Kusters, R. M., Singleton, J., Keen, D. A. et al., Magnetoresistance measurements on the magnetic semiconductor Nd0.5Pb0.5MnO3, Physica B, 1989, 155: 362–365
Helmolt, R., Wecker, J., Holzapfel, B. et al., Giant negative magnetoresistance in perovskitelike La2/3Ba1/3MnO3 ferromagnetic films, Phys. Rev. Lett., 1993, 71(14): 2331–2333.
**, S., Tiefel, T. H., McCormack, M. et al., Thousandfold change in resistivity in magnetoresistive La-Ca-Mn-O films, Science, 1993, 264: 413.
Zhao, T., Lu, H. B., Chen, F. et al., Highly conductive Nb doped SrTiO3 epitaxial thin films grown by laser molecular beam epitaxy, J. Crystal Growth, 2000, 212: 451–455.
Urushibara, A., Moritomo, Y., Arima, T. et al., Insulator-metal transition and giant magnetoresistance in La1-xSrxMnO3, Phys. Rev. B, 1995, 51(20): 14103–14109.
Author information
Authors and Affiliations
About this article
Cite this article
Lü, H., Dai, S., Chen, Z. et al. Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3O3 . Chin.Sci.Bull. 48, 1328–1330 (2003). https://doi.org/10.1007/BF03184172
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF03184172