Abstract
When a matrix of interest is a single crystal the channeling phenomenon can be exploited to increase the scope of charged particle analyses. One application provides increased sensitivity and precision in the analysis of surface films; another a means of locating foreign atoms within the crystal lattice.
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Reference
J. W. Mayer, L. Eriksson, J. A. Davies, Ion Implantation in Semiconductors, Academic Press, New York, 1970.
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Mackintosh, W.D. Channeling in charged particle analysis. J. Radioanal. Chem. 16, 421–425 (1973). https://doi.org/10.1007/BF02514172
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DOI: https://doi.org/10.1007/BF02514172