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(001) textured PbTiO3 thin films grown on redo**n-Si by metalorganic chemical vapor deposition under reduced pressure

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Abstract

(001) textured PbTiO3 thin films have been deposited on (001) redo**n-Si substrates by metalorgnic chemical vapor deposition (MOCVD) under reduced pressure, and the film ferroelectricity has been measured using the substrate as bottom electrode directly. Besides this investigation, a set of analysis including AFM surface morphology, SEM cross section morphology, electron-probe element analysis, XRD 0-20 scan and high temperature X-ray diffraction have been carried out to study the microstructure and phase transition process of the PbTiO3 thin film.

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Authors and Affiliations

  1. National Laboratory of Solid State Microstructures, Nan**g University, 210093, Nan**g, P. R. China

    L. Sun, Y. -F. Chen, T. Yu & N. -B. Ming

  2. Laboratory of Molecular and Bio-molecular Electronics, South-East University, 210013, Nan**g, P.R. China

    D. -S. Ding & Z. -H. Lug

Authors
  1. L. Sun
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  2. Y. -F. Chen
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  3. T. Yu
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  4. N. -B. Ming
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  5. D. -S. Ding
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  6. Z. -H. Lug
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Sun, L., Chen, Y.F., Yu, T. et al. (001) textured PbTiO3 thin films grown on redo**n-Si by metalorganic chemical vapor deposition under reduced pressure. Appl. Phys. A 63, 381–384 (1996). https://doi.org/10.1007/BF01567330

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