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Infrared and Raman study of Si2Te3

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Zeitschrift für Physik B Condensed Matter

Abstract

Results of ir and Raman investigations on trigonal layer-structured Si2Te3 single crystals are reported. The ir reflection spectrum withE⊥c exhibits seven reststrahl-like bands, whereas the corresponding spectrum withE∥c shows only one very small bump. Values forε 0 andε ∞ are given. The Raman spectra are very rich in structure and can only be interpreted qualitatively as being a mixture of single phonon lines and one- and two-phonon density-of-states contributions. One-phonon density-of-states effects are disorder-induced owing to the statistical occurrence of the Si atoms within the regular hexagonal Te sublattice.

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Author notes

  1. U. Zwick

    Present address: Standard Elektrik Lorenz AG, Abteilung CKS/LOKB, Hellmuth-Hirth-Straße 42, D-7000, Stuttgart 40, Federal Republic of Germany

Authors and Affiliations

  1. Max-Planck-Institut für Festkörperforschung, Stuttgart, Fed. Rep. Germany

    U. Zwick

  2. IBM-Zurich Research Laboratory, CH-8803, Rüschlikon, Switzerland

    K. H. Rieder

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  1. U. Zwick
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  2. K. H. Rieder
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Zwick, U., Rieder, K.H. Infrared and Raman study of Si2Te3 . Z Physik B 25, 319–322 (1976). https://doi.org/10.1007/BF01315246

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  • DOI: https://doi.org/10.1007/BF01315246

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