Defects induced by P⁺-implanted in silicon

Abstract

Cross-section transmission electron microscopy (X-TEM) has been used to show the microstructures and the defects in P⁺-implanted (100) silicon crystals. P⁺ implantation was done at room temperature with the energy of 150 keV and the dose of 1 × 10¹⁵cm⁻². High resolution electron microscopy (HREM) image of (0 1 ¯1) slice shows that there are an amorphous layer 110 nm below the incident surface of specimen with thickness of about 100 nm, and two imperfect layers located symmetrically on each side of the amorphous layer in which there are various kinds of defects. {1 1 1} stacking faults and stacking fault tetrahedra are found near the amorphous layer, and {3 1 1} defects are far away from the layer. The interfaces between the amorphous and the imperfect layers are rough, the substrate, however, remains perfect.