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Properties of Fe/Si heterostructure grown by MOCVD

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Abstract

An Fe film was grown on an Si(100) substrate by metalorganic chemical vapor deposition (MOCVD) using thermal decomposition of iron pentacarbonyl, Fe(CO)5. The X-ray diffraction and cross-sectional high resolution electron microscopy (HREM) show that the Fe deposited film is a single crystal Fe film on Si(100). Single crystal Fe/Si Schottky barrier diodes exhibit good rectification.

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Authors and Affiliations

  1. Department of Physics, Nan**g University, Nan**g, PR China

    Zheng Youdou & Zhang Rong

  2. Laboratory of Solid State Microstructures, Nan**g University, Nan**g, PR China

    Yan Yong & Feng Duan

  3. Department of Physics, State University of New York at Buffalo, 14260, Buffalo, NY, USA

    T. W. Kim & B. D. McCombe

Authors
  1. Zheng Youdou
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  2. Zhang Rong
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  3. Yan Yong
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  4. Feng Duan
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  5. T. W. Kim
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  6. B. D. McCombe
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Zheng, Y., Zhang, R., Yan, Y. et al. Properties of Fe/Si heterostructure grown by MOCVD. Appl. Phys. A 50, 237–239 (1990). https://doi.org/10.1007/BF00343424

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  • DOI: https://doi.org/10.1007/BF00343424

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