Abstract
We report a theoretical model for an estimate of carrier-induced changes in the refractive index of InSb at room temperature. The dispersion of Δn within the photon-energy interval of 0.12–0.24 eV is investigated for nonequilibrium carrier concentrations of 1015–1018 cm−3. An analysis of the influence of the initial carrier density on Δn is performed. The obtained results can help to develop InSb opto-electronic devices.
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